Asymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy
نویسندگان
چکیده
Scanning force microscopy ~SFM! has been used to perform nanoscale studies of the switching behavior of Pb~Zr, Ti!O3 thin films via the direct observation of their domain structures. The study revealed a significant asymmetry of a switching pattern which is a function of the voltage polarity and original domain structure of individual grains. The phenomenon of asymmetric switching is attributed ~1! to the presence of an internal built-in electric field at the bottom interface and ~2! to the mechanical stress exerted by the SFM tip. The former effect results in incomplete 180° switching, while the latter effect leads to a 90° rotation of the polarization vector. The resulting shear stress deformation of the grain underneath the tip combined with the applied field effect propels polarization reversal in the adjacent grains. © 2001 American Institute of Physics. @DOI: 10.1063/1.1366644#
منابع مشابه
Characterization and Control of Domain Structure in SrBi2Ta2O9 Thin Films by Scanning Force Microscopy
We used the piezoresponse mode of scanning force microscopy (SFM) to perform the first nanoscale observation of ferroelectric domain structure in as-grown SrBi2Ta2O9 films. By lowering the loading force down to approximately 1 nN and by keeping the imaging voltage just below the coercive voltage, we managed to obtain a sufficiently high contrast between opposite 180◦ domains without affecting t...
متن کاملNanoscale switching characteristics of nearly tetragonal BiFeO3 thin films.
We have investigated the nanoscale switching properties of strain-engineered BiFeO(3) thin films deposited on LaAlO(3) substrates using a combination of scanning probe techniques. Polarized Raman spectral analysis indicates that the nearly tetragonal films have monoclinic (Cc) rather than P4mm tetragonal symmetry. Through local switching-spectroscopy measurements and piezoresponse force microsc...
متن کاملFrontiers of Ferroelectricity
Three kinds of near-field microscopy imaging mode including SEAM (Scanning electron acoustic microscopy), PFM (Piezoresponse force microscopy) and SPAM (Scanning probe acoustic microscopy) have been developed to investigate domain structures of ferroelectric ceramics, crystals and thin films in our studies. The domain imaging mechanisms are presented individually in three imaging modes. Sub-sur...
متن کاملNanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba0.50Sr0.50)(Ti0.80Sn0.20)O3 Thin Films Prepared Using Chemical Solution Deposition
Nanoscale switchable ferroelectric (Ba0.50Sr0.50)(Ti0.80Sn0.20)O3-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiO x /SiO 2 /Si substrate by chemical solution deposition. X-ray diffraction (XRD) spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin fil...
متن کاملFerroelectric polarization reversal via successive ferroelastic transitions.
Switchable polarization makes ferroelectrics a critical component in memories, actuators and electro-optic devices, and potential candidates for nanoelectronics. Although many studies of ferroelectric switching have been undertaken, much remains to be understood about switching in complex domain structures and in devices. In this work, a combination of thin-film epitaxy, macro- and nanoscale pr...
متن کامل